Substrate processing apparatus

ABSTRACT

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No. 10-2016-0170410, filed on Dec. 14, 2016, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate deposition apparatus capable of preventing generation of parasitic plasma.

2. Description of the Related Art

In a process of manufacturing a semiconductor device, as a circuit line width decreases, more precise process control has been required. In a film deposition process that is one of important semiconductor processes, various efforts to achieve high film uniformity have been made.

One of major factors for uniform film deposition is a gas supply unit. A showerhead method is employed for a common gas supply unit. The showerhead method has a merit of uniformly supplying a gas onto a substrate in a coaxial shape.

Plasma is used to secure a relatively fast response speed. The plasma needs to be generated uniformly in a reaction space. When the plasma is generated in an unnecessary space, a defect may occur in an apparatus. Furthermore, when the plasma is not uniformly distributed on a substrate, the quality of a film may be deteriorated.

SUMMARY

One or more embodiments include a substrate deposition apparatus which may prevent generation of parasitic plasma.

One or more embodiments include a substrate processing apparatus which may prevent leakage of plasma power.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

The low dielectric material may include air.

At least one path for connecting the air and outside may be formed in the substrate processing apparatus.

The path may be formed between the partition and the conduit.

The path may be formed in the partition.

The partition may include a protruding portion protruding toward the gas supply unit, and the low dielectric material may contact one side surface of the protruding portion.

The partition may include a step portion located in an area where the through-hole is formed, the conduit may include a flange, and the conduit may be connected to the partition through a coupling between the flange and the step portion.

A path communicated with outside air may be formed between the step portion and the flange.

The substrate processing apparatus may further include an insulating plate arranged between the partition and the gas supply unit.

The substrate processing apparatus may further include a radio frequency (RF) rod connected to the gas supply unit by penetrating through at least part of the partition and the insulating plate.

The through-hole may have a first diameter in a first region and a second diameter greater than the first diameter in a lower portion of the first region.

A diameter of at least part of the through-hole may continuously increase toward the gas supply unit.

A side section profile of at least part of the through-hole may have a bell-like shape.

According to one or more embodiments, a substrate processing apparatus includes a partition including at least one through-hole, an insulating conduit arranged in the partition through the through-hole, a gas supply unit connected to the insulating conduit, an insulating plate arranged between the partition and the gas supply unit, and a radio frequency (RF) rod connected to the gas supply unit by penetrating through the insulating plate, wherein the partition includes at least one of first protruding portion contacting the insulating plate, and at least one of second protruding portion contacting the insulating plate and arranged between the first protruding portion and the insulating conduit, the RF rod is arranged between the first protruding portion and the second protruding portion, and an air-filled-space is formed between the partition and the insulating plate, between a side wall of the through-hole and the insulating conduit, and between the first protruding portion and the second protruding portion.

The second protruding portion may be continuously formed around the insulating conduit. The second protruding portion may further include a path. The path may be formed to connect a space between the first partition and the second partition and a space between the second partition and the insulating conduit. Alternatively, the second protruding portion may be discontinuously formed around the insulating conduit.

According to one or more embodiments, a substrate processing apparatus includes a partition providing a gas supply channel, a gas supply unit connected to the gas supply channel, and air between the partition and the gas supply unit, wherein the partition includes at least one first protruding portion protruding toward the gas supply unit, and the air contacts one side surface of the first protruding portion.

The first protruding portion may be arranged in an area overlapping the gas supply unit.

At least part of the first protruding portion may be arranged in an area that does not overlap the gas supply unit.

The partition may further include at least one second protruding portion protruding toward the gas supply unit and arranged between the first protruding portion and the gas supply channel, and the air may be provided between the first protruding portion and the second protruding portion and between the gas supply channel and the second protruding portion.

The substrate processing apparatus may further include a radio frequency (RF) rod connected to the gas supply unit and arranged between the first protruding portion and the second protruding portion.

The substrate processing apparatus may further include moisture absorbing member arranged to contact the air.

The second protruding portion may be continuously formed around the gas supply channel. For example, the second protruding portion may further include a path. The path may be formed to connect a space between the first partition and the second partition and a space between the second partition and the gas supply channel. Alternatively, the second protruding portion may be discontinuously formed around the gas supply channel.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings in which:

FIGS. 1 and 2 are schematic cross-sectional views of substrate processing apparatuses according to embodiments;

FIGS. 3 and 4 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments;

FIGS. 5 and 6 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments;

FIG. 7 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment;

FIGS. 8 and 9 are schematic cross-sectional views of modified examples of the embodiment of FIG. 7;

FIG. 10 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment;

FIG. 11 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment;

FIGS. 12 and 13 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments;

FIG. 14 is an enlarged cross-sectional view of a discharge portion of the substrate processing apparatus;

FIGS. 15 to 17 are schematic perspective views of reactors according to other embodiments and substrate processing apparatuses including the reactors;

FIGS. 18 and 19 schematically illustrate structures of reactors according to other embodiments;

FIGS. 20 and 21 schematically illustrate structures of back plates according to other embodiments;

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and a bottom view of a gas channel included in the gas supply unit, according to an embodiment;

FIGS. 25 and 26 illustrate various embodiments of a fourth through-hole and a fifth through-hole penetrating through a back plate and a gas channel; and

FIGS. 27 and 28 are graphs showing a thickness of a SiO₂ film deposited on a substrate by a plasma-enhanced atomic layer deposition (PEALD) method in a reactor according to an embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

Embodiments are provided to further completely explain the present inventive concept to one of ordinary skill in the art to which the present inventive concept pertains. However, the present inventive concept is not limited thereto and it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims. That is, descriptions on particular structures or functions may be presented merely for explaining embodiments of the present inventive concept.

Terms used in the present specification are used for explaining a specific embodiment, not for limiting the present inventive concept. Thus, the expression of singularity in the present specification includes the expression of plurality unless clearly specified otherwise in context. Also, terms such as “comprise” and/or “comprising” may be construed to denote a certain characteristic, number, step, operation, constituent element, or a combination thereof, but may not be construed to exclude the existence of or a possibility of addition of one or more other characteristics, numbers, steps, operations, constituent elements, or combinations thereof. As used in the present specification, the term “and/or” includes any one of listed items and all of at least one combination of the items.

In the present specification, terms such as “first” and “second” are used herein merely to describe a variety of members, parts, areas, layers, and/or portions, but the constituent elements are not limited by the terms. It is obvious that the members, parts, areas, layers, and/or portions are not limited by the terms. The terms are used only for the purpose of distinguishing one constituent element from another constituent element. Thus, without departing from the right scope of the present inventive concept, a first member, part, area, layer, or portion may refer to a second member, part, area, layer, or portion.

Hereinafter, the embodiments of the present inventive concept are described in detail with reference to the accompanying drawings. In the drawings, the illustrated shapes may be modified according to, for example, manufacturing technology and/or tolerance. Thus, the embodiment of the present inventive concept may not be construed to be limited to a particular shape of a part described in the present specification and may include a change in the shape generated during manufacturing, for example.

FIGS. 1 and 2 are schematic cross-sectional views of substrate processing apparatuses according to embodiments.

Referring to FIGS. 1 and 2, each substrate processing apparatus may include a partition 110, a conduit 120, a gas supply unit 130, a radio frequency (RF) rod 140, and a substrate support unit 150. Although an example of the substrate processing apparatus described in the present specification may include a deposition apparatus for a semiconductor or a display substrate, the present disclosure is not limited thereto. The substrate processing apparatus may be any apparatus needed to perform deposition of a material for forming a film, or may refer to an apparatus for uniformly supplying a source material for etching or polishing of a material. In the following description, for convenience of explanation, it is assumed that a substrate processing apparatus is a semiconductor thin-film deposition apparatus.

The partition 110 may be a constituent element of a reactor. In other words, a reaction space 160 for processing, for example, deposition, etching, or polishing, of a substrate may be formed by the structure of the partition. For example, the partition 110 may include at least one through-hole TH1. A gas supply channel may be provided through the through-hole TH1 of the partition 110.

The conduit 120 may be arranged in the partition 110 through the through-hole TH1. The conduit 120 may be the gas supply channel of the substrate processing apparatus. When a deposition apparatus is an atomic layer deposition apparatus, a source gas, a purge gas, and/or a reactive gas may be supplied through the conduit 120. The conduit 120 may include an insulating material. In some embodiments, the conduit 120 may be an insulating conduit formed of an insulating material.

The gas supply unit 130 may be connected to the conduit 120 that is the gas supply channel. The gas supply unit 130 may be fixed to the reactor. For example, the gas supply unit 130 may be fixed to the partition 110 through a fixed member (not shown). The gas supply unit 130 may be configured to supply a gas toward a target subject S in a reaction space 160. For example, the gas supply unit 130 may be a showerhead assembly configured to uniformly supply a gas.

The RF rod 140 may be connected to the gas supply unit 130 by penetrating at least part of the partition 110. The RF rod 140 may be connected to an external plasma supply unit (not shown). Although FIG. 2 illustrates two RF rods 140, the present disclosure is not limited thereto, and more than two RF rods may be installed to improve uniformity of plasma power supplied to the reaction space 160. Furthermore, although it is not illustrated in the drawings, to cut off the electrical connection between the RF rod 140 and the partition 110, an insulating body may be provided between the RF rod 140 and the partition 110.

The gas supply unit 130 may be a conductive body and may be used as an electrode to generate plasma. In other words, as the gas supply unit 130 is connected to the RF rod 140, the gas supply unit 130 may serve as an electrode to generate plasma. The gas supply unit 130 employing the above method of using the gas supply unit 130 as an electrode may be referred to as the gas supply electrode in the following description.

The substrate support unit 150 may be configured to provide an area in which the target subject S such as a semiconductor or display substrate is accommodated. Furthermore, the substrate support unit 150 may be configured to contact a lower surface of the partition 110. For example, the substrate support unit 150 may be supported by a support portion (not shown) capable of performing vertical and rotational motions. As the substrate support unit 150 is separated from the partition 110 or in contact with the partition 110 by the motions of the support portion, the reaction space 160 may be opened or closed. Furthermore, the substrate support unit 150 may be a conductive body and may be used as an electrode to generate plasma, that is, a counter electrode of the gas supply electrode.

An empty space 170 may be formed between the conduit 120 and a side wall of the through-hole TH1 of the partition 110. The empty space 170 may be filled with a low dielectric material. In an example, the low dielectric material may include air. Furthermore, the low dielectric material may include, in addition to the air, any one selected from among hydrogen silsesquioxane (HSQ), methyl silsesquioxane (MSQ), amorphous fluoro-carbon (a-C:F), fluorinated silicon oxide (SiOF), silicon oxycarbide (SiOC), and porous SiO₂, and a combination thereof.

The empty space 170 or the low dielectric material, for example, air, may prevent generation of parasitic plasma. For example, when a voltage is applied to gas supply electrode 130 to generate plasma, parasitic plasma may be generated in a space other than a space between the gas supply electrode 130 and a susceptor electrode 150. The parasitic plasma may be generated, for example, in a space between the partition 110 and the gas supply electrode 130 or in a space between the partition 110 and the conduit 120. The empty space 170 or the low dielectric material, for example, air, filling the empty space 170 may prevent the generation of the parasitic plasma.

Accordingly, according to embodiments of the present inventive concept, contaminated particles generated by the parasitic plasma, and contamination of the inside of a chamber and deterioration of the quality of process outcomes according to the contaminated particles, may be addressed.

The partition 110 may include a protrusion 180 protruding toward the gas supply unit 130. At least part of the protrusion 180 may be arranged in an area that overlaps the gas supply unit 130 or an area that does not overlap the gas supply unit 130. In some embodiments, at least part of the protrusion 180 may be arranged in an area that does not overlap an area C of the substrate support unit 150 in which the target subject S is accommodated. In some embodiments, the protrusion 180 may not entirely overlap the area C of the substrate support unit 150 in which the target subject S is accommodated.

One side surface of the protrusion 180 may contact the low dielectric material. In detail, the protrusion 180 may contact the gas supply unit 130 (or an insulating plate). Of side walls perpendicular to the contact surface, a side wall facing the gas supply channel, for example, the conduit 120, may contact the low dielectric material, for example, air.

To implement the side wall of the protrusion 180, the through-hole TH1 of the partition 110 may have a first diameter in a first region, and may have a second diameter greater than the first diameter in a second region under the first region. In other words, a first portion of the through-hole TH1 arranged in the first region may have the first diameter to provide the gas supply channel or accommodate the conduit 120, whereas a second portion of the through-hole TH1 arranged in the second region may have the second diameter greater than the first diameter to provide the protrusion 180.

When the low dielectric material is air, at least one path connecting the air and the outside may be formed in the substrate processing apparatus. The path may be a path P1 formed between the partition 110 and the conduit 120. Furthermore, the path may be a path P2 formed between the RF rod 140 and the partition 110, or a path (not shown) formed in the partition 110.

FIGS. 3 and 4 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIGS. 3 and 4, the substrate processing apparatus according to the present embodiment may include the partition 110, the gas supply unit 130, the RF rod 140, and the substrate support unit 150. In the present embodiment, the partition 110 of the substrate processing apparatus may be configured to provide a gas supply channel 115. In some embodiments, a conduit may be provided in the gas supply channel 115.

The partition 110 of the substrate processing apparatus may further include a protrusion 185, in addition to the protrusion 180 described above. The protrusion 185, like the protrusion 180, may protrude toward the gas supply unit 130. Furthermore, the low dielectric material that may fill the empty space may contact one side surface of the protrusion 180 and one side surface of the protrusion 185.

In the following description, in order to distinguish the protrusions 180 and 185 from each other, the protrusion 180 may be referred to as the first protrusion, and the protrusion 185 may be referred to as the second protrusion. However, the above indication is merely for convenience of explanation and the first protrusion defined in claims may refer to the protrusion 180 or the protrusion 185.

Contrary to the first protrusion 180, the second protrusion 185 is entirely arranged in an area overlapping the gas supply unit 130. Furthermore, the second protrusion 185 is entirely arranged in an area overlapping the area C of the substrate support unit 150 in which the target subject S is accommodated. In some embodiments, the protrusion 180 may contact the gas supply unit 130 (or an insulating plate) and, among the side walls perpendicular to the contact surface, a side wall in an opposing direction to the gas supply channel 115, for example, the conduit 120, may contact the low dielectric material, for example, air.

Referring to FIG. 4, at least part of the partition 110 of the substrate processing apparatus may further include a through-hole TH2 to accommodate the RF rod 140. The RF rod 140 may be connected to the gas supply unit 130 via the through-hole TH2, A support member 145 may be arranged between the partition 110 and the RF rod 140. For example, the support member 145 may include an insulating body. In some embodiments, the support member 145 may be implemented in the form of a flange. The support member 145 may prevent plasma power supplied by the RF rod 140 from leaking through the partition 110.

In the embodiment of FIG. 4, one side surface of the support member 145 may be exposed to the empty space 170. In some embodiments, one side surface of the support member 145 may contact the low dielectric material.

In some embodiments, at least part of an exposed side surface of the support member 145 may be removed. Accordingly, one side surface of the RF rod 140 may be exposed to the empty space 170. In other words, the support member 145 may be arranged only between the partition 110 and the RF rod 140, and may not be formed in a lower portion of the RF rod 140. Accordingly, similar to the embodiment illustrated in FIG. 2, the low dielectric material may contact one side surface of the RF rod 140. A permittivity of the low dielectric material may be lower than the permittivity of the support member 145, and thus a parasitic plasma blocking effect may be additionally improved through the above structure.

In some embodiments, as described above, the air that is the low dielectric material filling the empty space 170 may be communicated with the outside atmosphere through the path P2, and instead of the path P2 or in addition to the path P2, a path P2′ formed between the support member 145 and the partition 110 may be communicated with the outside atmosphere.

FIGS. 5 and 6 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 5, the substrate processing apparatus according to the present embodiment may further include an insulating plate 190. The insulating plate 190 may be arranged between the partition 110 and the gas supply unit 130. The RF rod 140 may be connected to the gas supply unit 130 by penetrating through at least part of the partition 110 of the substrate processing apparatus and the insulating plate 190. Although it is not illustrated in the drawings, a support member may be arranged between the RF rod 140 and the partition 110.

Referring to FIG. 6, an upper surface and one side surface of the insulating plate 190 may contact the low dielectric material. In other words, a through-hole of the insulating plate 190 may be configured to have a diameter greater than the diameter of the RF rod 140 or a sum of the diameters of the RF rod 140 and the support member. Accordingly, the air, that is, the low dielectric material, filling the empty space 170 of the substrate processing apparatus may contact not only the upper surface of the insulating plate 190, but also the side surface thereof. Furthermore, the low dielectric material may contact the upper surface of the gas supply electrode 130.

FIG. 7 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 7, the through-hole TH1 of the partition 110 may have a third diameter between the first diameter and the second diameter in a third region R3 between a first region R1 and a second region R2. The low dielectric material may be arranged between a side wall of the through-hole TH1 having the second diameter and the conduit 120 and between a side wall of the through-hole TH1 having the third diameter and the conduit 120. By filling the space between the conduit 120 and the through-hole TH1 having the second diameter and the third diameter with the low dielectric material such as the outside atmosphere (air), parasitic plasma may be prevented from being generated in the empty space 170.

FIG. 8 is a schematic cross-sectional view of a modified example of the embodiment of FIG. 7, in which the diameter of at least part of the through-hole TH1, for example, the third diameter of the third region R3, continuously increases toward the gas supply unit 130. The shape is to secure the volume of an air insulating layer formed in the substrate processing apparatus as large as possible. Accordingly, provided that mechanical stability is guaranteed, an inclination that the third diameter increases may be designed to be relatively large.

FIG. 9 is a schematic cross-sectional view of a modified example of the embodiment of FIG. 8, in which the conduit 120 of the substrate processing apparatus includes a flange F and the partition 110 includes a step portion 210. The step portion 210 may be located in an area where the through-hole TH1 is formed, and may extend protruding from the partition 110. The step portion 210 may extend in a horizontal direction or an inclined direction to support the flange F of the conduit 120.

The conduit 120 may be connected to the partition 110 through a mechanical coupling between the flange F and the step portion 210. A separated sealing member such as an O-ring may not be inserted between the flange F of the conduit 120 and the step portion 210, and thus a path P3 communicating with the outside atmosphere may be formed between the step portion 210 and the flange F. Air circulation between the air insulating layer of the empty space 170 and the outside atmosphere may be performed through the path P3. Accordingly, in spite of a temperature change according to a process progress, pressure in an air-filled space may be appropriately maintained.

FIG. 10 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 10, a side section profile of at least part of the through-hole TH1 of the partition 110 may have a bell-like shape. The profile of a bell-like shape may be advantageous in that the weight of the partition 110 may be uniformly distributed, mechanical stability of the substrate processing apparatus may be secured, and the volume of the air insulating layer formed in the substrate processing apparatus may be secured as large as possible.

A gap G may be formed between the step portion 210 and the flange F of the conduit 120. The gap G is provided to increase the volume of the air insulating layer, that is, to minimize a contact area between the flange F and the partition 110 that is a metal material. In order to form the gap G, the width of the step portion 210 may be a size to place the flange F of the conduit 120 on the step portion 210 without slipping, that is, a size enough to provide the mechanical coupling between the flange F of the conduit 120 and the partition 110. For example, a length of the flange F extending and protruding from the conduit 120 may be greater than a length of the step portion 210 extending and protruding from the partition 110.

The partition 110 may further include a third protrusion 187 in addition to the first protrusion 180. The third protrusion 187 may be arranged between the first protrusion 180 and the gas supply channel like the conduit 120. The third protrusion 187 may be continuously formed around the conduit 120 or a plurality of third protrusion 187 may be formed discontinuously at a certain interval. The third protrusion 187, like the first protrusion 180, may protrude toward the gas supply unit 130. Furthermore, the low dielectric material may contact at least one side surface of the third protrusion 187. For example, when the low dielectric material is air, the air may be arranged between the first protrusion portion 180 and the third protrusion 187 and between the conduit 120 and the third protrusion 187.

In some embodiments, the third protrusion 187 may be continuously formed, and a path P4 may be formed such that the air between the first protrusion 180 and the third protrusion 187 and the air between the conduit 120 and the third protrusion 187 may be communicated with each other. Although in the drawings the path P4 is formed in the third protrusion 187, the path P4 may be formed by forming a path in a surface of the third protrusion 187 contacting the insulating plate 190, without forming a separate through-hole.

For example, the third protrusion 187 may be discontinuously formed. Due to the structure of the third protrusion 187 that is discontinuously formed, a groove may be formed between the third protrusions 187, and the space between the first protrusion 180 and the third protrusion 187 and the space between the third protrusion 187 and the conduit 120 may be connected by the groove. Furthermore, a part, for example, an upper portion, of the third protrusion 187 is continuously formed, and another part, for example, a lower portion, of the third protrusion 187 may be formed discontinuously.

In some embodiments, by not arranging a separate member such as an O-ring between the third protrusion 187 and the insulating plate 190, the path P4 may be formed between the third protrusion 187 and the insulating plate 190. In other words, the path P4 may be a space in a surface contact between the third protrusion 187 and the insulating plate 190.

By arranging the third protrusion 187 between the gas supply channel 115 and first protrusion 180, the mechanical stability of the partition 110 having the empty space 170 may be reinforced. In some embodiments, the RF rod 140 may be arranged between the first protrusion 180 and the third protrusion 187, and the mechanical stability may be additionally reinforced by the above arrangement. In other words, the weight of the upper portion of the partition 110 may be mechanically distributed by first protrusion 180, the RF rod 140, and the third protrusion 187.

Referring to FIG. 10, the substrate processing apparatus may include the following elements of:

-   -   the partition 110 including at least one through-hole TH1;     -   the (insulating) conduit 120 arranged in the partition 110         through the through-hole TH1;     -   the gas supply unit 130 connected to the (insulating) conduit         120;     -   the insulating plate 190 arranged between the partition 110 and         the gas supply unit 130; and     -   the RF rod 140 connected to the gas supply unit 130 by         penetrating through the insulating plate 190.

The partition 110 of the substrate processing apparatus may include the following elements of:

-   -   at least one first protrusion 180 contacting the insulating         plate 190; and     -   at least one third protrusion 187 contacting the insulating         plate 190 and arranged between the first protrusion 180 and the         (insulating) conduit 120.

Furthermore, the RF rod 140 may be arranged between the first protrusion 180 and the third protrusion 187. Furthermore, the air-filled space may be formed between the partition 110 and the insulating plate 190, between the side wall of the through-hole TH1 and the insulating conduit 120, and between the first protrusion 180 and the third protrusion 187.

FIG. 11 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 11, the substrate processing apparatus according to the present embodiment may include a moisture absorbing member 220 arranged to contact the air. As the temperature is changed during the process in the substrate processing apparatus, a condensation phenomenon of a vapor component in the air may occur. The moisture absorbing member 220 contacting the air may remove the vapor component and moisture. Accordingly, permittivity of the air-filled space may be maintained in a low state.

The moisture absorbing member 220 may be arranged on the partition 110 as illustrated in FIG. 11 or may be embedded in the partition 110. Furthermore, the moisture absorbing member 220 may be arranged to contact the air on the insulating plate 190 or in the insulating plate 190.

In some embodiments, one side surface of the insulating plate 190 may contact the low dielectric material, and a gap may be formed between the insulating plate 190 and the conduit 120. In other words, the through-hole of the insulating plate 190 may be configured to have a diameter greater than the diameter of the conduit 120. Accordingly, the air filling the empty space 170 of the substrate processing apparatus may contact not only the upper surface of the insulating plate 190, but also the side surface thereof. Furthermore, the low dielectric material may contact the upper surface of the gas supply electrode 130.

FIGS. 12 and 13 are schematic cross-sectional views of substrate processing apparatuses according to other embodiments. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 12, in a reactor 1, a reaction space 18 is formed as a reactor wall 2 and a susceptor 25 perform face-contact and face-sealing with each other. A substrate is mounted on the susceptor 25 and a lower portion of the susceptor 25 is connected to a device (not shown) capable of ascending/descending to load/unload the substrate.

An inner space of the reactor wall 2 may be divided by a first partition 5 into a first region 3 and a second region 4. The first region 3 and the second region 4 respectively correspond to an upper region and a lower region of the reactor 1. The first region 3 may be divided by a second partition 6 into a third region 8 and a fourth region 13.

Furthermore, the first region 3 may be divided by a third partition 7 into the fourth region 13 and a fifth region 14 In other words, as the third partition 7 is arranged between the reactor wall 2 and the second partition 6, the fourth region 13 and the fifth region 14 may be formed.

A first through-hole 9 may be formed in the third region 8. The first through-hole 9 penetrates through the first partition 5 and connects the third region 8 that is an upper space of the reactor 1 and the second region 4 that is a lower space of the reactor 1. A first step 15 is formed between the first through-hole 9 and the third region 8.

A sixth region 17 is formed between the second region 4 and the first partition 5. The width of the first through-hole 9 penetrating through the third region 8 gradually increases toward the sixth region 17. A space of the first through-hole 9 that increases toward the sixth region 17 may be filled with external air. The external air serves as an insulator during a plasma process, and thus generation of parasitic plasma in the space may be prevented. Furthermore, the sixth region 17 may further include a fourth partition 19, and the fourth partition 19 may support a back plate 20.

A gas inlet portion is inserted in the first through-hole 9. The gas inlet portion may include a first gas inlet 6 and a flange 27, and may further include a first gas supply channel 28 penetrating through the inside of the gas inlet portion. The first gas supply channel 28 penetrates through the first gas inlet 6 and the flange 27 and extends to the second region 4. A sealing member such as an O-ring may be inserted in a coupling surface between the first gas inlet 6 and the flange 27, and thus the first gas supply channel 28 may be isolated from the external air. A first gas supply path 29 and a second gas supply path 30 are connected to the first gas inlet 26 to supply a gas used for processing a substrate. For example, a source gas, a reactive gas, and a purge gas used for an atomic layer deposition process are supplied to the reaction space 18 via the first gas supply path 29, the second gas supply path 30, and the first gas supply channel 28. The flange 27 may be formed of an insulator and may prevent leakage of plasma power during the plasma process.

The reactor 1 may further include a second through-hole 10 that penetrates through one surface of the third partition 7. The second through-hole 10 is connected to the second region 4 by sequentially penetrating through the third partition 7 and the first partition 5. An upper portion of the second through-hole 10 is coupled to a second gas inlet 31. A sealing member such as an O-ring is inserted in a coupling surface between the second through-hole 10 and the second gas inlet 31, and thus intrusion of the external air may be prevented. The source gas, the reactive gas, or the purge gas may be supplied through the second gas inlet 31 and the second through-hole 10. As described above, the second through-hole 10 may be plurally provided.

The back plate 20, a gas channel 21, and a gas supply plate 22 may be sequentially arranged between the first partition 5 and the reaction space 18. The gas supply plate 22 and the gas channel 21 may be coupled by using a coupling member. The gas channel 21 and the first partition 5 may be coupled by using another coupling member.

For example, the gas channel 21 and the first partition 5 may be coupled through the back plate 20. As a result, the back plate 20, the gas channel 21, and the gas supply plate 22 may be sequentially stacked above the fourth partition 19 protruding from the first partition 5. The gas supply plate 22 may include a plurality of holes for supplying a gas to a substrate (not shown) in the reaction space 18. For example, a gas supply unit including the gas channel 21 and the gas supply plate 22 may be a showerhead, and in another example, the gas supply unit may be a device for uniformly supplying a material for etching or polishing an object.

A gas flow channel 24 is formed between the gas channel 21 and the gas supply plate 22. A gas supplied through the first gas supply channel 28 may be uniformly supplied to the gas supply plate 22. A width of the gas flow channel 24 may gradually decrease from a center portion toward a peripheral portion thereof.

A third through-hole 23 may be formed in the back plate 20 and one surface of the gas channel 21. A second step 16 may be formed between the back plate 20, the gas channel 21, and the third through-hole 23. According to the present inventive concept, the third through-hole 23 may penetrate through center portions of the back plate 20 and the gas channel 21, and the flange 27 of the gas inlet portion may be inserted in the first step 15 and to the second step 16.

A sealing member such as an O-ring may be inserted between the flange 27 and the second step 16, between the first partition 5 and the back plate 20, and/or between the back plate 20 and the gas channel 21. Accordingly, isolation from the external air may be obtained.

The reactor 1 may further include a fourth through-hole 11 penetrating through one surface of the back plate 20, and a fifth through-hole 12 penetrating through one surface of the gas channel 21. The fourth through-hole 11 and the fifth through-hole 12 may be connected to the second through-hole 10. Accordingly, the gas supplied through the second through-hole 10 is supplied to the gas flow channel 24.

The fifth through-hole 12 may penetrate through the gas supply plate 22 in a perpendicular direction, or may penetrate through the gas channel 21 in an inclined direction as illustrated in FIG. 12. Furthermore, the penetration direction may lead toward the inside of the gas flow channel 24 or the outside thereof. Furthermore, the fifth through-hole 12 may be arranged between the center and the edge of the gas flow channel 24, or arranged spaced apart from the edge. Alternatively, the position of the fifth through-hole 12 may be determined to correspond to the position of a patterned structure having a large specific surface area of the substrate to be processed.

The fourth through-hole 11 and/or the fifth through-hole 12 may be spaced apart a certain distance from the center portions of the back plate 20 and the gas channel 21 and may form a plurality of through-holes in a horizontal direction. Alternatively, the fourth through-hole 11 and/or the fifth through-hole 12 may form a plurality of through-holes in a vertical direction while mainlining a certain distance toward the center portions of the back plate 20 and the gas channel 21. In the fourth through-hole 11 and/or the fifth through-hole 12, the interval between the through-holes may be adjusted according to a desired process.

A buffer space 38 may be further formed between the second through-hole 10 and the fourth through-hole 11. The buffer space 38 may retain the gas supplied through the second through-hole 10 so to be uniformly supplied to the fourth through-hole 11. In some embodiments, the buffer space 38 may be formed between the fourth through-hole 11 and the fifth through-hole 12.

A first discharge portion 32 is formed in the reactor wall 2 of the reactor 1. The first discharge portion 32 may include a first discharge hole 33 and a first discharge channel 34. The first discharge portion 32 is connected to the fifth region 14 via the first discharge hole 33 penetrating through the first partition 5.

An upper portion of the fifth region 14 may be coupled to a discharge path cover 36, forming a discharge path. A sealing member such as an O-ring is inserted in a coupling surface between the fifth region 14 and the discharge path cover 36, thereby isolating the discharge path from the external air. Furthermore, one surface of the discharge path cover 36 may include a gas outlet 35. The gas outlet 35 may be connected to a discharge pump (not shown) to discharge the gas.

An upper portion of the fourth region 13 of the reactor 1 may be coupled to an upper cover 37 for safety. The upper cover 37 may protect an RF distribution plate 39 from the outside.

FIG. 13 is a cross-sectional view of the reactor 1 viewed in a different direction. Referring to FIG. 13, in addition to the gas supply channel 28 of FIG. 12, at least one sixth through-hole 43 connected to the second region 4 by penetrating through another surface of the first partition 5 may be formed in the first partition 5 of the reactor 1. The sixth through-hole 43 may be arranged between the second partition 6 and the third partition 7.

A coupling member 40 may be inserted in the sixth through-hole 43, and thus the gas channel 21 and the first partition 5 may be mechanically coupled to each other by the coupling member 40. The back plate 20 may include a hole in one surface thereof, through which the coupling member 40 passes. The back plate 20 with the gas channel 21 may be mechanically coupled to the first partition 5. The coupling member 40 may be a conductive body and may be a screw.

A support member 41 is inserted around the coupling member 40, and the support member 41 is formed of an insulating body. Accordingly, the coupling member 40 and the first partition 5 may be electrically insulated from each other by the support member 41, and thus the leakage of plasma power during the plasma process may be prevented.

The gas channel 21 and the gas supply plate 22 may be formed of a conductive body. Accordingly, the gas channel 21 and the gas supply plate 22 may serve as an electrode to transfer the plasma power during the plasma process plasma.

The flange 27, the back plate 20, and the support member 41 may be formed of an insulating body. Accordingly, the plasma power may be prevented from being leaked through the reactor wall 2 via the first partition 5. Furthermore, by filling the first through-hole 9 and the sixth region 17 around the flange 27 with the external air, generation of parasitic plasma in the space may be prevented.

The gas channel 21 and the gas supply plate 22 arranged in a lower region (the second region 4) may be coupled to each other by a separate coupling member 42. The coupling member 42 may be formed of a conductive body and may be a screw. In some embodiments, the gas channel 21 and the gas supply plate 22 included in gas supply unit may be integrally formed.

FIG. 14 is an enlarged cross-sectional view of a discharge portion of the substrate processing apparatus. Referring to FIG. 14, the discharge portion may include the first discharge portion 2 and a second discharge portion 44. The first discharge portion 32 may include the first discharge hole 33 and the first discharge channel 34. The second discharge portion 44 may include a second discharge hole 45 and a second discharge channel 46. The first and second discharge holes 33 and 45 may penetrate through the first partition 5. Furthermore, the first and second discharge holes 33 and 45 may connect the discharge path, that is, the fifth region 14, and the discharge channels 34 and 46.

In the reaction space 18, the residual gas left after a chemical reaction with the substrate is discharged through the first and second discharge portions 32 and 44. Most residual gas may flow to a region “A” via a discharge gap 48. Then, the residual gas in the region “A” may pass through the first discharge portion 32 and may be discharged to the fifth region 14 that is a discharge path.

The gas confined to a region “B” that is a blind spot next to the gas channel and the gas supply plate may be discharged to the fifth region 14 that is a discharge path through the second discharge portion 44. The diameters of the first discharge hole 33 and the second discharge hole 45 may be identical to or different from the diameters of the first discharge channel 34 and the second discharge channel 46, respectively. By appropriately adjusting the ratio of the diameters of the first discharge hole 33, the second discharge hole 45, the first discharge channel 34, and/or second discharge channel 46, discharge efficiency at around the edge portion of the substrate may be controlled and the uniformity of a film may be adjusted accordingly. Furthermore, by adjusting the size of the discharge gap 48, the discharge efficiency and the uniformity of a film may be controlled.

FIGS. 15 to 17 are schematic perspective views of reactors according to other embodiments and substrate processing apparatuses including the reactors. The substrate processing apparatus according to the present embodiment may be modified examples of the substrate processing apparatuses according to the above-described embodiments. Redundant descriptions between the embodiments are omitted in the following description.

Referring to FIG. 15, the reactor according to the present embodiment may further include a protection cover 50, in addition to the first gas inlet 26, the gas outlet 35, and the discharge path cover 36. The protection cover 50 is a protection cover to protect an RF delivery plate 52.

FIGS. 16 and 17 illustrate that the protection cover 50 is removed. Referring to FIGS. 16 and 17, the RF delivery plate 52 is connected to the RF distribution plate 39. The RF distribution plate 39 is electrically connected to a plurality of RF rods 54. In an embodiment, for the uniform supply of RF power, the RF rods 54 may be symmetrically arranged with respect to the center of the gas channel 21, for example, the center of the first gas inlet 26.

An upper portion of the RF delivery plate 52 may be connected to an RF generator (not shown). A lower portion of the RF delivery plate 52 may be connected to the RF distribution plate 39. The RF distribution plate 39 may be connected to the RF rods 54.

Accordingly, the RF power generated by the RF generator is delivered to the gas channel 21 via the RF delivery plate 52, the RF distribution plate 39, and the RF rods 54. The gas channel 21 is mechanically connected to the gas supply plate 22, and the gas channel 21 and the gas supply plate 22 altogether may serve as RF electrodes.

At least one of the RF rods 54 may be installed in the reactor. The RF rods 54 may be arranged to penetrate through a portion of the first partition 5 of FIG. 12 arranged between the second partition 6 of FIG. 12 and the third partition 7 of FIG. 12. In an additional embodiment, as illustrated in FIG. 17, at least two of the RF rods 54 may be arranged, and the RF rods 54 may be symmetrically arranged with respect to the center of the reactor. The symmetric arrangement may enable the RF power to be uniformly supplied to the RF electrodes 21 and 22.

In some embodiments, a cartridge heater (not shown) may be installed above the reactor wall 2 to heat the reactor wall. A plurality of cartridge heaters may be symmetrically arranged, and thus a uniform temperature gradation of the reactor wall 2 may be achieved.

FIGS. 18 and 19 schematically illustrate structures of reactors according to other embodiments. The reactors according to the present embodiments may be a perspective view (FIG. 18) and a bottom view (FIG. 19) of the back plate 20 according to the above-described embodiments.

Referring to FIGS. 18 and 19, the second partition 6 may be arranged spaced apart a certain distance from the center of the upper space of the reactor wall 2. The third partition 7 may be arranged between the sidewall of the reactor wall 2 and the second partition 6. The gas supply channel 28 of FIG. 12 extending from the upper space to the lower space may be provided by the structure of the second partition 6.

The fourth partition 19 may contact an upper surface of the back plate 20 of FIG. 12 to support the back plate 20.

The coupling member 40 and the support member 41 may be inserted in a screw hole 56. Accordingly, the gas channel 21 of FIG. 12 and the back plate 20 of FIG. 12 may be mechanically connected to the first partition 5 of FIG. 12.

The RF rods 54 are inserted in a plurality of RF rod holes 58 and electrically connected to the gas channel 21.

A discharge path is formed in the fifth region 14, and the first discharge hole 33 and the second discharge hole 45 may be respectively connected to the first discharge channel 34 of FIG. 14 and the second discharge channel 46 of FIG. 14, forming a discharge portion.

The width of the first through-hole 9 may gradually increase toward the sixth region 17 of FIG. 12. The space of the sixth region 17 may be filled with the external air and may serve as an insulating body during the plasma process. Accordingly, the generation of parasitic plasma in the space formed by the first through-hole 9 may be prevented.

FIGS. 20 and 21 schematically illustrate structures of the back plates 20 according to other embodiments. The back plates, according to the present embodiments may be a perspective view (FIG. 20) and a bottom view (FIG. 21) of the back plate 20 according to the above-described embodiments.

The back plate 20 is located between the first partition 5 of FIG. 12 and the gas channel 21 of FIG. 12. Furthermore, the back plate 20 formed of an insulating body may serve as an insulator to isolate the first partition 5 of FIG. 12 from the gas channel 21 and the gas supply plate 22, which are the RF electrodes, during the plasma process.

The fourth through-holes 11 may be plurally formed spaced apart a certain distance from the center of the back plate 20 in upper/lower surface of the back plate 20. The fourth through-holes 11 may receive a gas from the second through-hole 10 of FIG. 12 and supply the gas to the fifth through-hole 12 of FIG. 12 penetrating through the gas channel 21 of FIG. 12. The third through-hole 23 is located at a center portion of the back plate 20, and the flange 27 of FIG. 12 is inserted in the third through-hole 23.

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and a bottom view of the gas channel 21 included in the gas supply unit, according to an embodiment.

The gas channel 21 may include a plurality of fifth through-holes 12 arranged spaced apart a certain distance from the center portion of the gas channel 21.

Referring to FIG. 23, the positions of the fifth through-holes 12 in the upper surface of the gas channel 21 may correspond to the positions of the fourth through-holes 11 of the back plate 20 illustrated in FIGS. 20 and 21.

The fifth through-holes 12 formed in the gas channel 21 may penetrate through the gas channel 21 in a perpendicular direction or in an inclined direction.

For example, referring to FIG. 23, the fifth through-holes 12 may be arranged or formed along a first circumference having a first diameter d on a first surface of the gas channel 21. Furthermore, referring to FIG. 24, the fifth through-holes 12 may be arranged or formed along a second circumference having a second diameter d′ on a second surface of the gas channel 21. In an example, the first diameter d may be greater than the second diameter d′. However, the present inventive concept is not limited thereto, and it may be that d=d′ or d≠d′.

FIG. 25 illustrate various embodiments of the fourth through-hole 11 and the fifth through-hole 12 penetrating through the back plate 20 and the gas channel 21.

As illustrated in FIG. 25, the fifth through-hole 12 penetrating through the gas channel 21 may penetrate through the gas supply plate 22 in a perpendicular direction or an inclined direction. When the fifth through-hole 12 penetrates through the gas supply plate 22 in an inclined direction, the fifth through-hole 12 may lead toward the inside of the gas flow channel 24 or the outside thereof. Although it is not illustrated, the fourth through-hole 11 is not limited to the shape that extends vertically.

FIG. 26 illustrates that the second through-hole 10, the fourth through-hole 11, and the fifth through-hole 12 penetrate through the third partition 7, the first partition 5, the back plate 20, and the gas channel 21, according to another embodiment.

As illustrated in FIG. 26, each of the second gas inlet 31, the second through-hole 10, the buffer space 38, the fourth through-hole 11, and the fifth through-hole 12 is plurally provided and a plurality of gases are supplied to the gas flow channel 24 via the second gas inlets 31. For example, the source gas, the reactive gas, and the purge gas may be supplied through the respective inlets.

The gas supplied to the gas flow channel 24 via the second through-hole 10, the fourth through-hole 11, and the fifth through-hole 12 may be supplied to an edge region of the reaction space 18 via an edge portion under the gas supply plate 22, or to a region between the center portion and the edge portion of the reaction space 18. As a result, the uniformity or characteristics of a film formed in an edge region (edge portion) of the substrate to be processed or in a specific peripheral portion between the center portion and the edge region of the substrate may be selectively controlled.

For example, the uniformity of a film deposited in the edge region of the substrate or in a region between the center portion and the edge portion of the substrate may be selectively controlled according to a flow rate of the gas supplied through the second, fourth, and fifth through-holes 10, 11, and 12, and a degree of inclination of the fifth through-hole 12 penetrating through the gas channel 21. Furthermore, due to these factors, a uniformity deviation from a film deposited at the center portion of the substrate may be reduced or controlled.

For example, a film having a minimum uniformity deviation between the center portion and the edge portion of the substrate may be deposited. In another example, a film having a concave shape, in which the edge portion of the substrate is thicker than the center portion thereof, may be deposited, or a film having a convex shape, in which the center portion of the substrate is thicker than the edge portion thereof, may be deposited. The gas supplied through the second through-hole 10, the fourth through-hole 11, and the fifth through-hole 12 may be an inert gas. In some embodiments, the gas may be the reactive gas and/or the source gas participating in the formation of a film.

FIGS. 27 and 28 are graphs showing a thickness of a SiO₂ film deposited on a substrate by a plasma-enhanced atomic layer deposition (PEALD) method in a reactor according to an embodiment. The graphs show the effect of the gas supplied through the second through-hole 10, the fourth through-hole 11, and the fifth through-hole 12 on the uniformity of a film, in particular, the uniformity of a film deposited at the edge portion of the substrate.

The horizontal axis of the graphs denotes a distance of 150 mm to the left and right from the center of the wafer when the diameter of the substrate is 300 mm. The vertical axis of the graphs denotes the thickness of a film. In the present embodiment, the effect is evaluated by setting the angle of the fifth through-hole 12 penetrating through the gas channel 21 to 30° and varying a gas flow rate.

TABLE 1 1st through-hole Source 2nd thru-hole carrier Ar Purge Ar O2 Edge gas RF (sccm) (sccm) (sccm) (sccm) power(W) Pressure(Torr) 1000 3500 200 Ar 0~1000 400 2 1000 3500 200 O2 0~500 400 2

As shown in Table 1, through the first through-hole (main hole) that is the gas supply channel, Ar of 1000 sccm was supplied as a source carrier and Ar of 3500 sccm was supplied as a purge gas, and O2 of 200 sccm may be supplied as a reactive gas continuously for an entire process period (Accordingly, a total flow rate is 4,700 sccm). Plasma of 400 watt was supplied and a pressure of 2 torr was maintained in a reaction space during the process.

Oxygen was activated only when plasma is supplied and reacted with source molecules on the substrate. Accordingly, the oxygen serves as a purge gas when plasma is not supplied. Accordingly, oxygen may serve as a reactive purge gas in the present process.

The gas supplied through the second through-hole may be Ar or O2. The gas may be continuously supplied for the entire process period. The flow rate of the gas may be appropriately controlled according to a desired film uniformity around the substrate.

The inventive concept according to the above-described embodiments can be summarized as follows.

-   -   First operation of continuously supplying a source gas, a purge         gas, and a reactive purge gas through a first through-hole     -   Second operation of continuously supplying at least one of the         purge gas and the reactive purge gas through a second         through-hole     -   Third operation of applying plasma     -   The first operation and the second operation may be         simultaneously performed, whereas the third operation may be         temporarily performed while the first operation and the second         operation are performed.

The first through-hole corresponds to the gas supply channel 28 of FIG. 12, and the second through-hole corresponds to the through-holes 10, 11, and 12 of FIG. 12 penetrating through at least part of the gas supply unit.

As illustrated in FIG. 27, it may be seen that, as the flow rate of the Ar gas supplied through the second through-hole increases, the thickness of the film deposited at the edge portion of the substrate decreases. Also, as illustrated in FIG. 28, it may be seen that, as the flow rate of the oxygen gas supplied through the second through-hole increases, the thickness of the film deposited at the edge portion of the substrate increases. In other words, by inducing and controlling a blocking effect on a peripheral portion of the substrate with respect to the source gas and the reactive gas supplied to a peripheral portion of the reaction space, uniformity of a film on the substrate may be controlled.

The embodiment of the present inventive concept may not be construed to be limited to a particular shape of a part described in the present specification and may include a change in the shape generated during manufacturing, for example.

It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments.

While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims. 

What is claimed is:
 1. A substrate processing apparatus comprising: a partition comprising at least one through-hole; a conduit arranged in the partition through the through-hole; a gas supply unit connected to the conduit; and a low dielectric material provided between a side wall of the through-hole and the conduit, wherein the partition comprises a first protrusion protruding toward the gas supply unit, wherein the low dielectric material contacts one side surface of the first protrusion, and wherein the first protrusion of the partition is located above the gas supply unit, wherein the gas supply unit is used as an electrode to generate plasma, wherein the partition further comprises a second protrusion between the first protrusion and the conduit, wherein the second protrusion is symmetrically formed around the conduit, wherein a first low dielectric material between the first protrusion and the second protrusion, and a second low dielectric material between the conduit and the second protrusion are provided, and wherein the gas supply unit under the partition is mechanically supported by the first protrusion and the second protrusion of the partition.
 2. The substrate processing apparatus of claim 1, wherein the low dielectric material comprises air.
 3. The substrate processing apparatus of claim 2, wherein at least one path for connecting the air and outside is formed in the substrate processing apparatus.
 4. The substrate processing apparatus of claim 3, wherein the path is formed between the partition and the conduit.
 5. The substrate processing apparatus of claim 3, wherein the path is formed in the partition.
 6. The substrate processing apparatus of claim 1, wherein the partition comprises a step portion located in an area where the through-hole is formed, the conduit comprises a flange, and the conduit is connected to the partition through a coupling between the flange and the step portion.
 7. The substrate processing apparatus of claim 6, wherein a path communicated with outside air is formed between the step portion and the flange.
 8. The substrate processing apparatus of claim 1, further comprising an insulating plate arranged between the partition and the gas supply unit, wherein the first protrusion and the second protrusion contact with the insulating plate, and wherein the gas supply unit is mechanically supported by the first protrusion and the second protrusion through the insulating plate.
 9. The substrate processing apparatus of claim 8, further comprising a radio frequency (RF) rod connected to the gas supply unit by penetrating through at least part of the partition and the insulating plate.
 10. The substrate processing apparatus of claim 1, wherein the through-hole has a first diameter in a first region and a second diameter greater than the first diameter in a lower portion of the first region.
 11. The substrate processing apparatus of claim 10, wherein a diameter of at least part of the through-hole continuously increases toward the gas supply unit.
 12. The substrate processing apparatus of claim 11, wherein a side section profile of at least part of the through-hole has a bell-like shape.
 13. The substrate processing apparatus of claim 1, wherein the low dielectric material prevents generation of parasitic plasma between the partition and the gas supply unit.
 14. A substrate processing apparatus comprising: a partition comprising at least one through-hole; an insulating conduit arranged in the partition through the through-hole; a gas supply unit connected to the insulating conduit; an insulating plate arranged between the partition and the gas supply unit; and a radio frequency (RF) rod connected to the gas supply unit by penetrating through the insulating plate, wherein the partition comprises: at least one of first protrusion contacting the insulating plate; and at least one of second protrusion contacting the insulating plate and arranged between the first protrusion and the insulating conduit, the RF rod is arranged between the first protrusion and the second protrusion, and an air-filled-space is formed between the partition and the insulating plate, between a side wall of the through-hole and the insulating conduit, and between the first protrusion and the second protrusion, wherein the first protrusion protrudes toward the gas supply unit, wherein the air-filled-space contacts one side surface of the first protrusion, wherein the first protrusion of the partition is located above the gas supply unit, and wherein the gas supply unit is used as an electrode to generate plasma, wherein the second protrusion between the first protrusion and the insulating conduit is symmetrically formed around the insulating conduit, wherein a first air-filled space between the first protrusion and the second protrusion and a second air-filled space between the insulating conduit and the second protrusion are formed, and wherein the first protrusion and the second protrusion contact with the insulating plate so that the first protrusion and the second protrusion contribute to mechanical stability between the partition and the insulating plate.
 15. A substrate processing apparatus comprising: a partition providing a gas supply channel; a gas supply unit connected to the gas supply channel; and air between the partition and the gas supply unit, wherein the partition comprises at least one first protrusion protruding toward the gas supply unit, and the air contacts one side surface of the first protrusion, wherein the first protrusion of the partition is located above the gas supply unit, wherein the gas supply unit is used as an electrode to generate plasma, and wherein the first protrusion is arranged in an area overlapping the gas supply unit, wherein the partition further comprises at least one second protrusion protruding toward the gas supply unit and arranged between the first protrusion and the gas supply channel, the air is provided between the first protrusion and the second protrusion and between the gas supply channel and the second protrusion, wherein the second protrusion between the first protrusion and the gas supply channel is symmetrically formed around the gas supply channel, wherein a first air between the first protrusion and the second protrusion and a second air between the gas supply channel and the second protrusion are provided, and wherein the gas supply unit under the partition is mechanically supported by the first protrusion and the second protrusion of the partition.
 16. The substrate processing apparatus of claim 15, wherein the air prevents generation of parasitic plasma between the partition the gas supply unit.
 17. The substrate processing apparatus of claim 15, wherein a path is formed in the second protrusion, and wherein the first air and the second air are communicated one another through the path.
 18. The substrate processing apparatus of claim 17, further comprising a radio frequency (RF) rod connected to the gas supply unit and arranged between the first protrusion and the second protrusion. 